Cluster tool and manufacuturing method of semiconductor structure using the same
AssigneeTaiwan Semiconductor Manufacturing Company, Ltd.
InventorHan-Wen Liao
Life of this patent
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Abstract
A cluster tool includes a polyhedral transfer chamber, at least one processing chamber, at least one load lock chamber, and an electron beam (e-beam) source. The processing chamber is connected to the polyhedral transfer chamber. The processing chamber is configured to perform a manufacturing procedure to a wafer present therein. The load lock chamber is connected to the polyhedral transfer chamber. The e-beam source is configured to performing an e-beam treatment to the wafer after the wafer is performed the manufacturing procedure.
Claims20
A method for manufacturing a semiconductor structure comprising:
- depositing a first metal gate layer of a gate stack on a substrate, wherein at least one residue is formed on the first metal gate layer;
- tuning a wavelength of an e-beam of an e-beam treatment from a first specific wavelength to a second specific wavelength that is different from the first specific wavelength and that is configured to remove a specific type of residue;
- and
- performing the e-beam treatment at the second specific wavelength on the first metal gate layer to remove the residue while the first metal gate layer is exposed.
A method for manufacturing a semiconductor structure comprising:
- performing a first etching process to form at least one trench in a semiconductive layer, wherein the trench extends from a top of the semiconductive layer to a first depth in the semiconductive layer and not through the semiconductive layer after performing the first etching process;
- tuning an energy of an e-beam of an e-beam treatment from a first specific energy level to a second specific energy level that is different from the first specific energy level and that is configured to remove a specific type of residue of the first etching process;
- performing the e-beam treatment at the specific energy level on a first sidewall of the trench to remove the residue of the first etching process;
- and
- performing a second etching process to deepen the trench in the semiconductive layer after performing the e-beam treatment, wherein the trench extends from the top of the semiconductor layer to a second depth in the semiconductor layer and not through the semiconductive layer after performing the second etching process.
A method for manufacturing a semiconductive structure comprising:
- transferring a substrate to a processing chamber to perform a deposition procedure to form a first metal gate layer of a gate stack over the substrate, wherein the first metal gate layer is formed in an opening in a dielectric layer over the substrate and on a top surface of the dielectric layer;
- tuning a property an e-beam of an e-beam treatment from a first specific property to a second specific property that is different from the first specific property and that is configured to remove a specific type of residue of the deposition procedure;
- performing the e-beam treatment at the specific property on the first metal gate of the gate stack while the first metal gate layer is exposed on the top surface of the dielectric layer;
- and
- after performing the e-beam treatment, performing a second deposition procedure to form a second metal gate layer of the gate stack over the first metal gate layer of the gate stack.
Dependencies are inferred from the claim text.