Speculative section selection within a memory device

A method, comprising:

• receiving a memory address corresponding to memory cells in a first memory section;
• selecting a first access line in the first memory section and a second access line in a second memory section based at least in part on receiving the memory address identifying that repair cells corresponding to the memory cells are located in the second memory section;
• indicating, to the first memory section, that the repair cells are located in the second memory section;
• deselecting the first access line based at least in part on the location of the repair cells;
• and
• accessing, in the second memory section, the repair cells instead of the memory cells based at least in part on identifying the repair cells, wherein
• accessing the repair cells comprises selecting, after the first access line is deselected, a third access line in the second memory section that is coupled with the repair cells.

A method, comprising:

• receiving a memory address corresponding to memory cells in a first memory section;
• selecting a first access line in the first memory section and a second access line in a second memory section based at least in part on receiving the memory address, wherein:
• selecting the first access line comprises activating a first plate line and a first digit line in the first memory section, and
• selecting the second access line comprises activating a second plate line and a second digit line in the second memory section;
• and
• deselecting the second access line based at least in part on a location of repair cells corresponding to the memory cells, wherein the repair cells are located in one of the first memory section or the second memory section.

A method, comprising:

• determining that a quantity of repair cells in a first memory section of a plurality of memory sections have been configured to repair defective memory cells in the first memory section;
• configuring, based at least in part on the determining, each of the plurality of memory sections to be activated based at least in part on memory addresses corresponding to memory cells in the first memory section;
• receiving, by at least one of the plurality of memory sections, a memory command that indicates a memory address corresponding to the memory cells in the first memory section;
• selecting, in each of the plurality of memory sections, at least one access line based at least in part on receiving the memory command;
• comparing, at least partially concurrently with selecting at least one access line in each of the plurality of memory sections, the memory address with addresses of defective memory cells;
• matching the memory address with one of the addresses of defective memory cells;
• and
• deselecting, in a subset of the plurality of memory sections, the at least one access line based at least in part on a location of repair cells corresponding to the memory cells in the first memory section, wherein the location of the repair cells is identified based at least in part on matching the memory address with one of the addresses of defective memory cells.

An apparatus, comprising:

• a group of memory sections configured to each be selected when a memory address of one of the group of memory sections is received at any one or more of the group of memory sections, the group of memory sections comprising:
• a first memory section comprising a first access line, first memory cells coupled with the first access line, and a first decoding circuit configured to select the first access line based at least in part on a received memory address corresponding to the first memory section;
• and
• a second memory section comprising a second access line and a second decoding circuit configured to select the second access line based at least in part on the received memory address corresponding to the first memory section,
• wherein the first decoding circuit is further configured to deselect the first access line based at least in part on a location of repair cells for the first memory cells being in the second memory section.