Methods of performing read count leveling for multiple portions of a block of memory cells

A method, comprising:

• incrementing a first read count in response to performing a read operation on a memory cell of a block of memory cells, the first read count corresponding to a first portion of memory cells of the block of memory cells;
• incrementing a second read count in response to performing the read operation on the memory cell of the block of memory cells, the second read count corresponding to a second portion of memory cells of the block of memory cells;
• resetting the first read count in response to performing an erase operation on the first portion of memory cells of the block of memory cells;
• resetting the second read count in response to performing an erase operation on the second portion of memory cells of the block of memory cells;
• in response to a value of the first read count reaching a threshold:
• copying data of the first portion of memory cells to a free portion of memory cells;
• and
• after copying the data of the first portion of memory cells, erasing the first portion of memory cells;
• in response to a value of the second read count reaching the threshold:
• copying data of the second portion of memory cells to a free portion of memory cells;
• and
• after copying the data of the second portion of memory cells, erasing the second portion of memory cells;
• and
• setting a value of the threshold in response to a page level read capability for the block of memory cells, comprising setting the value of the threshold to be less than or equal to the page level read capability times a number of pages of memory cells contained in the block of memory cells.

A method, comprising:

• incrementing a first read count in response to performing a read operation on a memory cell of a block of memory cells, the first read count corresponding to a first portion of memory cells of the block of memory cells;
• incrementing a second read count in response to performing the read operation on the memory cell of the block of memory cells, the second read count corresponding to a second portion of memory cells of the block of memory cells;
• resetting the first read count in response to performing an erase operation on the first portion of memory cells of the block of memory cells;
• resetting the second read count in response to performing an erase operation on the second portion of memory cells of the block of memory cells;
• and
• incrementing the first read count and the second read count in response to performing a read operation on any memory cell of the block of memory cells.

A method, comprising:

• for each memory cell of a first portion of memory cells of a block of memory cells and a second portion of memory cells of the block of memory cells mutually exclusive of the first portion of memory cells;
• incrementing a first read count in response to performing a read operation on a that memory cell of the block of memory cells, the first read count corresponding to the first portion of memory cells;
• incrementing a second read count in response to performing the read operation on that memory cell of the block of memory cells, the second read count corresponding to the second portion of memory cells;
• resetting the first read count in response to performing an erase operation on the first portion of memory cells without performing an erase operation on the second portion of memory cells;
• resetting the second read count in response to performing an erase operation on the second portion of memory cells without performing an erase operation on the first portion of memory cells;
• and
• resetting the first read count and the second read count in response to performance a single erase operation on the first portion of memory cells and on the second portion of memory cells.

A method, comprising:

• for each memory cell of a block of memory cells;
• incrementing a first read count in response to performing a read operation on that memory cell of the block of memory cells, the first read count corresponding to a first portion of memory cells of the block of memory cells;
• incrementing a second read count in response to performing the read operation on that memory cell of the block of memory cells, the second read count corresponding to a second portion of memory cells of the block of memory cells mutually exclusive of the first portion of memory cells;
• in response to a value of the first read count reaching a threshold while a value of the second read count is below the threshold value:
• copying data of the first portion of memory cells to a free portion of memory cells;
• after copying the data of the first portion of memory cells, performing an erase operation on the first portion of memory cells without performing an erase operation on the second portion of memory cells;
• and
• resetting the first read count in response to performing the erase operation on the first portion of memory cells without resetting the second read count;
• in response to a value of the second read count reaching the threshold while the value of the first read count is below the threshold value:
• copying data of the second portion of memory cells to a free portion of memory cells;
• after copying the data of the second portion of memory cells, performing an erase operation on the second portion of memory cells without performing an erase operation on the second portion of memory cells;
• and
• resetting the second read count in response to performing the erase operation on the second portion of memory cells without resetting the first read count;
• and
• in response to the value of the first read count and the value of the second read count reaching the threshold value:
• copying data of the block of memory cells to a free block of memory cells;
• after copying the data of the block of memory cells, performing an erase operation on the block of memory cells;
• and
• resetting the first read count and the second read count in response to performing the erase operation on the block of memory cells.