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US 10,872,673 B2Granted
Semiconductor memory device
AssigneeToshiba Memory Corporation
InventorsToshifumi Watanabe, Naofumi Abiko, Mario Sako
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AssigneeToshiba Memory Corporation
InventorsToshifumi Watanabe, Naofumi Abiko, Mario Sako
Estimating the term…
A semiconductor memory cell includes a memory cell, a word line and a source line both connected to the memory cell, and a control circuit. During a read operation on the memory cell, the control circuit applies a first voltage to the word line, applies a second voltage greater than the first voltage to the word line, and then applies a third voltage which is greater than the first voltage and smaller than the second voltage to the word line. During the read operation on the memory cell, the control circuit also applies a fourth voltage to the source line according to a timing at which the second voltage is applied to the word line, and then applies a fifth voltage smaller than the fourth voltage to the source line.
A semiconductor memory device comprising:
A semiconductor memory device comprising:
A method of performing a read operation on a memory cell of a semiconductor memory device comprising a word line connected to the memory cell, and a source line respectively connected to the memory cell, said method comprising:
Dependencies are inferred from the claim text.