US 10,872,671 B1 · Dynamic read voltages in non-volatile memory

Abstract

A non-volatile storage system comprises a group of non-volatile memory cells, and one or more control circuits in communication with the group. The one or more control circuits are configured to perform a plurality of passes to revise a read reference signal based on comparisons of numbers of non-volatile memory cells in the group having a value for a physical property (e.g., threshold voltage or resistance) in adjacent regions. With each pass the adjacent regions are smaller. The one or more control circuits are configured to establish a final read reference signal based on a signal associated with one of the adjacent regions on a final pass of the plurality of passes. The one or more control circuits are configured to use the final read reference signal to distinguish between two adjacent data states stored in the group.

Claims14

Dependent claims

An apparatus comprising:

a group of non-volatile memory cells;
and
one or more control circuits in communication with the group, the one or more control circuits configured to:
perform a plurality of passes to revise a read reference signal based on comparisons of numbers of non-volatile memory cells in the group having a value for a physical property in adjacent regions, wherein with each pass the adjacent regions are smaller;
establish a final read reference signal based on a signal associated with one of the adjacent regions on a final pass of the plurality of passes;
and
use the final read reference signal to distinguish between two adjacent data states stored in the group.

4 more elements

A method, comprising:

programming a group of non-volatile memory cells to a plurality of data states that are defined by a value of a physical property of the memory cells;
performing a plurality of passes to revise a read reference signal in which with each pass a range of values of the physical property for a region is smaller, including for a plurality of two adjacent regions determine which region has more memory cells with a value of the physical property within the region, wherein each region is defined by two reference signals that correspond to a range of values of the physical property;
establishing a final read reference signal based on the reference signals for one of the regions on a final pass of the plurality of passes;
and
using the final read reference signal to sense the group to distinguish between two adjacent data states of the plurality of data states.

2 more elements

Dependencies are inferred from the claim text.

Dynamic read voltages in non-volatile memory

Life of this patent

Dynamic read voltages in non-volatile memory

Life of this patent

Abstract

Claims14