Resistive memory devices with transition metal dichalcogenide (TMD) materials as ballast resistors to control current flow through the devices

Abstract

In one embodiment, systems, methods, and apparatus are described that can reduce the peak current through semiconductor memory devices such as RRAM devices. In one embodiment, transition metal dichalcogenide (TMD) materials can be used to in connection with both the transistors and the memory (for example, RRAM) devices. In one embodiment, two-dimensional (2D) materials, that is, materials that are on the order of a few angstroms thick can be used in connection with both the transistors and the memory (for example, RRAM) devices. In one embodiment, the TMD layer(s) and/or the 2D material(s) can act as a ballast to the RRAM device that can control the current flow through the RRAM device. In one embodiment, the systems, methods, and apparatus can serve to reduce the current as the voltage increases at a predetermined range, a property that can be referred to as negative differential resistance (NDR).

Dependencies are inferred from the claim text.