Sub-word line driver with soft-landing
AssigneeMicron Technology, Inc.
InventorKyuseok Lee
Life of this patent
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AssigneeMicron Technology, Inc.
InventorKyuseok Lee
Estimating the term…
A memory device includes a plurality of sub-word line drivers with, each sub-word line driver configured to receive a main word line signal and configured to drive a respective local word line to at least one of an active state, a soft-landing state, an off state based on the main word line signal and a phase signal. The memory device also includes a plurality of phase drivers with each phase driver configured to generate the respective phase signal. The memory device can further include a processing device configured to drive the respective local word line to the soft-landing state prior to entering the off state when transitioning from the active state to the off state so as to provide row hammer stress mitigation between adjacent local word lines corresponding to the plurality of sub-word line drivers. Each sub-word line driver includes a diode-connected transistor.
An apparatus, comprising:
A method, comprising:
Dependencies are inferred from the claim text.