Spin torque reversal assisted magnetic recording (STRAMR) device having a width substantially equal to that of a traililng shield

A spin transfer torque reversal assisted magnetic recording (STRAMR) structure, comprising:

• (a) a main pole (MP) that is configured to generate a write gap (WG) magnetic field in a down-track direction between a MP trailing side and a trailing shield, and across a STRAMR device, and wherein a side gap (SG) is formed between each side of the MP and a side shield;
• (b) the trailing shield (TS);
• and
• (c) the STRAMR device having a width that is substantially greater than a sum (w+2s) where w is a track width of the MP trailing side at an air bearing surface (ABS) and s is a width of each SG at the ABS, and where the STRAMR device is formed between the MP and TS, comprising:
• (1) a non-spin polarization preserving layer (pxL) that contacts a TS bottom surface;
• (2) a flux change layer (FCL) with a first magnetization substantially parallel to the WG magnetic field and having a top surface that contacts the pxL;
• and
• (3) a spin polarization preserving layer (ppL) that adjoins a FCL bottom surface, and wherein the STRAMR device is configured so that when a direct current (DC) than is an (Ia) of sufficient magnitude is applied from the MP to TS across the STRAMR device, the first magnetization flips to a direction substantially opposing the WG magnetic field thereby increasing reluctance in the WG and enhancing a write field in a recording medium.

A method of forming a perpendicular magnetic recording (PMR) writer having a spin transfer torque reversal assisted magnetic recording (STRAMR) structure, comprising:

• (a) providing a main pole (MP) with a tapered trailing side that extends from a first plane to a MP top surface that is aligned orthogonal to the first plane and has a first dielectric layer formed thereon, and wherein a side gap separates the MP from a side shield on each side of a center plane that bisects the MP tapered trailing side;
• (b) depositing a STRAMR stack of layers on a top surface of the MP tapered trailing side, first dielectric layer, side gaps, and side shields;
• the STRAMR stack of layers is bisected by the center plane and comprises:
• (1) a non-spin polarization preserving layer (pxL);
• (2) a flux change layer (FCL) with a first magnetization that flips to a direction substantially opposing a write gap (WG) field when sufficient spin torque is applied from a reference layer (RL);
• (3) a spin polarization preserving layer (ppL);
• and
• (4) the RL with a second magnetization that is aligned substantially along a direction of a WG field, and wherein spin polarized electrons are back scattered from the RL to generate a spin torque on the FCL when a direct current (DC) is applied across the STRAMR stack of layers that has a pxL/FCL/ppL/RL configuration or a RL/ppL/FCL/pxL configuration in a direction from the RL to the pxL and electrons in the DC transit from the pxL to RL;
• (c) forming a backside on the STRAMR stack of layers that is a first height (h) from the first plane, and depositing an insulating layer that adjoins the backside of the STRAMR stack of layers;
• (d) depositing a trailing shield (TS) layer on the STRAMR stack of layers;
• and
• (e) patterning the TS layer and STRAMR stack of layers to form sides thereon and thereby forming a STRAMR device having a first width (w1) that is bisected by the center plane and is essentially equal to a width of the patterned TS layer.