Bonding area structure, method of manufacturing the same, panel and touch display device

A method of manufacturing a bonding area structure, wherein the bonding area structure is located in a peripheral region of a panel including an intermediate region and the peripheral region, and the peripheral region surrounds the intermediate region of the panel,

• wherein the method comprises:
• coating a substrate with a light shielding material to form a light blocking layer;
• depositing a conductive layer on a side of the light blocking layer away from the substrate, and forming a patterned electrode by a first patterning process;
• depositing a metal layer on the substrate on which the patterned electrode is formed, and forming a metal connection portion disposed on the patterned electrode by a second patterning process;
• and
• coating the substrate on which the metal connection portion is formed with photoresist, and forming an etch barrier on a side of the light blocking layer away from the substrate and in a region where no patterned electrode is disposed by a third patterning process, the etch barrier covering at least a portion of the light blocking layer exposed by the patterned electrode,
• wherein an orthographic projection of the etch barrier on the substrate does not overlap with an orthographic projection of the metal connection portion on the substrate,
• wherein a height of the etch barrier is greater than a height of the patterned electrode adjacent to the etch barrier, and a top surface of the etch harrier is higher than a top surface of the metal connection portion,
• wherein a difference between the height of the etch barrier and the sum of the height of the patterned electrode and a height of the metal connection portion does not exceed 7% of the height of the metal connection portion.

A method of manufacturing a bonding area structure, wherein the bonding area structure is located in a peripheral region of a panel including an intermediate region and the peripheral region, and the peripheral region surrounds the intermediate region of the panel,

• wherein the method comprises:
• coating a substrate with a light shielding material to form a light blocking layer;
• depositing a conductive layer and a metal layer on a side of the light blocking layer away from the substrate in sequence, and forming a patterned electrode and a metal connection portion disposed on the patterned electrode by a single patterning process;
• and
• coating the substrate on which the metal connection portion is formed with photoresist, and forming an etch barrier on a side of the light blocking layer away from the substrate and in a region where no patterned electrode is disposed by a third patterning process, the etch barrier covering at least a portion of the light blocking layer exposed by the patterned electrode,
• wherein an orthographic projection of the etch barrier on the substrate does not overlap with an orthographic projection of the metal connection portion on the substrate,
• wherein a height of the etch barrier is greater than a height of the patterned electrode adjacent to the etch barrier, and a top surface of the etch barrier is higher than a top surface of the metal connection portion,
• wherein a difference between the height of the etch barrier and the sum of the height of the patterned electrode and a height of the metal connection portion does not exceed 7% of the height of the metal connection portion.