Power chip

A power chip, comprising:

• a first power switch, formed in a wafer region, each first power switch having a first metal electrode and a second metal electrode;
• a second power switch, formed in the wafer region, each second power switch having a third metal electrode and a fourth metal electrode, wherein the first power switch and the second power switch respectively constitute an upper bridge arm and a lower bridge arm of a bridge circuit, at least one bridge arm of the upper bridge arm and the lower bridge arm comprises two or more power switches parallel to each other, wherein the first power switch and the second power switch are arranged alternately along a first direction;
• and
• a metal region, comprising a first metal layer, a second metal layer and a third metal layer that are stacked in sequence, wherein each of the first metal layer, the second metal layer and the third metal layer comprises first strip electrodes, second strip electrodes and third strip electrodes, and strip electrodes among the first, second and third strip electrodes with the same voltage potential in two adjacent metal layers among the first metal layer, the second metal layer and the third metal layer are electrically coupled,
• wherein in each of the first strip electrodes, the second strip electrodes and the third strip electrodes of the second metal layer, an arrangement width of a region with a high current density is larger than an arrangement width of a region with a low current density.