Mask blank for lithography and method of manufacturing the same
AssigneeTaiwan Semiconductor Manufacturing Company, Ltd.
InventorsMing-Wei Chen, Hsin-Chang Lee, Ping-Hsun Lin
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Abstract
A mask for cleaning a lithography apparatus includes a mask substrate and a coating provided on a surface of the mask substrate. The coating is configured to trap particulate contaminant matter from the lithography apparatus. A method of cleaning a lithography tool is also provided preparing a cleaning mask including a particle trapping layer formed on a substrate. The method includes transferring the cleaning mask through a mask transferring route of the lithography tool. Subsequently, the method includes analyzing a particle trapped by the particle trapping layer.
Claims20
A method of cleaning a lithography tool, the method comprising:
- preparing a cleaning mask;
- and
- transferring the cleaning mask through a mask transferring route of the lithography tool,
- wherein the cleaning mask includes a particle trapping layer formed on a substrate and the particle trapping layer includes nano-fibers forming a mesh structure, and
- wherein the particle trapping layer is formed on all surfaces of the substrate.
A method of cleaning a lithography tool, the method comprising:
- preparing a cleaning mask, the cleaning mask including a particle trapping layer formed on a substrate and the particle trapping layer including nano-fibers formed on a roughened surface;
- transferring the cleaning mask through a mask transferring route of the lithography tool;
- and
- analyzing a particle trapped by the particle trapping layer.
A cleaning photo mask for an EUV lithography tool, comprising:
- a substrate;
- and
- a particle trapping layer formed on at least one surface of the substrate, wherein the particle trapping layer includes at least one selected from the group consisting of nano-fibers and a polymer and the nano-fibers form a mesh structure,
- the substrate is a quartz substrate or a low thermal expansion material substrate, and
- the particle trapping layer is formed directly on at least one surface of the quartz substrate.
Dependencies are inferred from the claim text.