Electro-optical device and electronic apparatus

An electro-optical device comprising:

• a substrate;
• a plurality of first signal lines extending along a first direction;
• a plurality of second signal lines extending along a second direction intersecting the first direction;
• a display region in which pixels are provided in correspondence with intersections between the plurality of first signal lines and the plurality of second signal lines;
• and
• a first peripheral circuit provided on one side in the first direction of the display region and including a plurality of first unit circuits that correspond to the plurality of first signal lines and are provided along the second direction at a pitch identical to pitches of the plurality of first signal lines, one of the first unit circuits including:
• a first transistor of a first conductivity type including a semiconductor layer, a gate insulating layer, and a gate electrode, the semiconductor layer including a first high concentration impurity introduction region, a first LDD region, a channel region, a second LDD region, and a second high concentration impurity introduction region;
• a second transistor of a second conductivity type including a semiconductor layer, a gate insulating layer, and a gate electrode,
• a first light-shielding layer provided between the substrate and the first transistor, the first light-shielding layer having an island shape such that the first light-shielding layer overlaps with the first high concentration impurity introduction region and the first LDD region in plan view, and
• a second light-shielding layer provided between the substrate and the first transistor, the second light-shielding layer having an island shape such that the second light-shielding layer overlaps with the second high concentration impurity introduction region and the second LDD region in plan view, wherein:
• the channel region includes (a) a first step extending in a channel width direction, the first step reflecting a shape of an end portion of the first light-shielding layer, and (b) a second step extending in the channel width direction, the second step reflecting a shape of an end portion of the second light shielding layer, and
• a light-shielding layer is not provided in an area between the substrate and the second transistor.