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US 10,871,663 B2Granted
Integrated electro-optical device
AssigneesSTMicroelectronics (Crolles 2) SAS, Commissariat A L'energie Atomique Etaux Energies Alternatives
InventorsPatrick Le Maitre, Nicolas Michit, Jean-Francois Carpentier, Benoit Charbonnier
Life of this patent
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Abstract
A device, includes: a ring waveguide; a diode comprising a junction extending at least partly in the ring waveguide; and a first circuit configured to supply a signal representative of a leakage current in the diode.
Claims20
A device comprising:
- a ring waveguide;
- a diode comprising a junction extending at least partly in the ring waveguide;
- a measurement circuit coupled to the diode, the measurement circuit configured to generate a signal representative of a leakage current in the diode;
- and
- a control circuit coupled to the measurement circuit, the control circuit comprising:
- a memory element storage comprising instructions and a resonance wavelength target value;
- and
- a processor in communication with the memory element storage, wherein the processor executes the instructions to:
- determine a maximum value of the leakage current from the signal representative of the leakage current in the diode,
- determine a value of a resonance wavelength of the ring waveguide based on the maximum value of the leakage current;
- and
- calculate a difference between the determined value of the resonance wavelength of the ring waveguide and the resonance wavelength target value and, based thereon, modify a temperature of the ring waveguide.
9 more elements
A device comprising:
- a ring waveguide;
- a diode comprising a p/n junction, the p/n junction comprising a region disposed in the ring waveguide;
- a transimpedance amplifier coupled to the diode;
- and
- a processing circuit comprising:
- a memory element storage comprising instructions;
- and
- a microprocessor in communication with the memory element storage, wherein the microprocessor executes the instructions to
- receive an output from the transimpedance amplifier,
- determine a value of a resonance wavelength of the ring waveguide by determining a wavelength corresponding to a maximum value of the output from the transimpedance amplifier, and
- calculate a difference between the determined value of the resonance wavelength of the ring waveguide and a resonance wavelength target value and, based thereon, modify a temperature of the ring waveguide.
8 more elements
A device comprising:
- a ring waveguide;
- a heater configured to heat the ring waveguide;
- a diode comprising a p/n junction, the p/n junction comprising a region disposed in the ring waveguide;
- an operational amplifier coupled to the diode, the operational amplifier configured to supply a signal representative of a leakage current in the diode;
- and
- a processing circuit comprising:
- a memory element storage comprising instructions;
- and
- a microcontroller in communication with the memory element storage, wherein the microcontroller executes the instructions to
- receive the signal from the operational amplifier,
- determine a value of a resonance wavelength of the ring waveguide by determining a wavelength corresponding to a maximum value of the leakage current, and
- calculate a difference between the determined value of the resonance wavelength of the ring waveguide and a resonance wavelength target value and, based thereon, modify a temperature of the ring waveguide.
9 more elements
Dependencies are inferred from the claim text.