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US 10,871,614 B1Granted
Transverse-electric (TE) pass polarizer
AssigneeGlobalfoundries Inc.
InventorsYusheng Bian, Ajey Poovannummoottil Jacob
Life of this patent
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Abstract
One illustrative TE pass polarizer disclosed herein includes an input/output layer, a first buffer layer positioned above at least a portion of the input/output layer, a layer of epsilon-near-zero (ENZ) material positioned above at least a portion of the first buffer layer, and a metal-containing capping layer positioned above at least a portion of the layer of ENZ material.
Claims20
A transverse-electric (TE) pass polarizer, comprising:
- a base semiconductor substrate;
- an input/output layer positioned above the base semiconductor substrate;
- an insulation material positioned between the input/output layer and the base semiconductor layer;
- a first buffer layer positioned above at least a portion of the input/output layer;
- a second buffer layer positioned between the input/output layer and the first buffer layer;
- a layer of epsilon-near-zero (ENZ) material positioned above at least a portion of the first buffer layer;
- a third buffer layer positioned between the first buffer layer and the layer of ENZ material;
- a metal-containing capping layer positioned above at least a portion of the layer of ENZ material;
- and
- a fourth buffer layer positioned between the layer of ENZ material and the metal-containing capping layer.
7 more elements
A transverse-electric (TE) pass polarizer, comprising:
- a base semiconductor substrate;
- an input/output layer positioned above the base semiconductor substrate;
- an insulation material positioned between the input/output layer and the base semiconductor layer;
- a first buffer layer positioned above at least a portion of the input/output layer;
- a second buffer layer positioned above the first buffer layer;
- a third buffer layer positioned above the second buffer layer;
- a layer of epsilon-near-zero (ENZ) material positioned above at least a portion of the third buffer layer;
- a fourth buffer layer positioned above the layer of ENZ material;
- and
- a metal-containing capping layer positioned above at least a portion of the fourth buffer layer.
7 more elements
A transverse-electric (TE) pass polarizer, comprising:
- a base semiconductor substrate;
- an input/output layer positioned above the base semiconductor substrate;
- an insulation material positioned between the input/output layer and the base semiconductor layer;
- a first buffer layer positioned above at least a portion of the input/output layer;
- a second buffer layer positioned above the first buffer layer;
- a third buffer layer positioned above the second buffer layer;
- a layer of epsilon-near-zero (ENZ) material positioned above at least a portion of the third buffer layer;
- a fourth buffer layer positioned above the layer of ENZ material;
- a fifth buffer layer positioned above the fourth buffer layer;
- a sixth buffer layer positioned above the fifth buffer layer;
- and
- a metal-containing capping layer positioned above at least a portion of the sixth buffer layer.
9 more elements
Dependencies are inferred from the claim text.