Spintronic mechanical shock and vibration sensor device
AssigneeHoneywell International Inc.
InventorsRomney R. Katti, Edward F. Ambrose
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Abstract
A magnetic tunnel junction (MTJ) based sensor device includes a MTJ element and processing circuitry. The MTJ element includes a free layer, a pinned layer, an elastic layer, and a tunnel barrier. The free layer is spaced apart from the pinned layer by the tunnel barrier and the elastic layer. The processing circuitry is configured to measure a resistance at the MTJ element and determine whether mechanical shock and vibration has occurred based on the resistance at the MTJ element.
Claims20
A magnetic tunnel junction (MTJ) based sensor device, the device comprising:
- a MTJ element comprising a free layer, a pinned layer, an elastic layer, and a tunnel barrier, the free layer being spaced apart from the pinned layer by the tunnel barrier and the elastic layer, wherein the elastic layer changes in thickness in response to one or more of tensional stress or compressional stress;
- and
- processing circuitry electrically connected to the MTJ element and configured to:
- measure a resistance at the MTJ element;
- and
- determine whether mechanical shock and vibration has occurred based on the resistance at the MTJ element.
A method for detecting mechanical shock and vibration using a magnetic tunnel junction (MTJ) based sensor device, the method comprising:
- measuring, by processing circuitry, a resistance at a MTJ element, wherein the MTJ element comprises a free layer, a pinned layer, an elastic layer, and a tunnel barrier, the free layer being spaced apart from the pinned layer by the tunnel barrier and the elastic layer, wherein the elastic layer changes in thickness in response to one or more of tensional stress or compressional stress;
- and
- determining, by the processing circuitry, whether mechanical shock and vibration has occurred based on the resistance at the MTJ element.
A magnetic tunnel junction (MTJ) based sensor device, the device comprising:
- means for measuring a resistance at a MTJ element, wherein the MTJ element comprises a free layer, a pinned layer, an elastic layer, and a tunnel barrier, the free layer being spaced apart from the pinned layer by the tunnel barrier and the elastic layer, wherein the elastic layer changes in thickness in response to one or more of tensional stress or compressional stress;
- and
- means for determining whether mechanical shock and vibration has occurred based on the resistance at the MTJ element.
Dependencies are inferred from the claim text.