Gas supply method and film forming method
AssigneeTokyo Electron Limited
InventorsKatsumasa Yamaguchi, Kensaku Narushima, Hironori Yagi, Kouichi Sekido
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AssigneeTokyo Electron Limited
InventorsKatsumasa Yamaguchi, Kensaku Narushima, Hironori Yagi, Kouichi Sekido
Estimating the term…
There is provided a gas supply method for temporarily storing a raw material gas generated by vaporizing a raw material accommodated in a raw material container inside a buffer tank together with a carrier gas and subsequently supplying the raw material gas into a processing container. The gas supply method includes: controlling a flow rate of a gas exhausted from the buffer tank and a flow rate of the raw material gas and the carrier gas filled in the buffer tank, so that a second internal pressure of the buffer tank becomes equal to a first internal pressure of the buffer tank when a process is performed by supplying the raw material gas into the processing container, before supplying the raw material gas into the processing container.
A film forming method for forming a metal film by repeating a raw material gas supply step of temporarily storing a raw material gas generated by vaporizing a raw material accommodated in a raw material container inside a buffer tank together with a carrier gas and subsequently supplying the raw material gas into a processing container, and a reducing gas supply step of supplying a reducing gas for reducing the raw material gas into the processing container, comprising:
Dependencies are inferred from the claim text.