High pressure ammonia nitridation of tunnel oxide for 3DNAND applications

A method of forming a semiconductor structure, comprising:

• positioning a plurality of substrates in a quartz envelope disposed in an interior volume of a chamber, the substrate having a surface with an oxide layer formed thereon, the oxide layer having a via extending at least partially therein;
• and
• introducing a flow of NH3 to inside the quartz envelope, the introducing the flow of NH3 to inside the quartz envelope comprising:
• providing NH3 to a gas injection assembly disposed in the interior volume of the chamber;
• flowing the NH3 to the interior volume outside of the quartz envelope and then to the inside of the quartz envelope at a flow rate;
• and
• maintaining a pressure of at least 10 atm in the interior volume while flowing the NH3 to the interior volume outside of the quartz envelope and then to the inside of the quartz envelope to perform a plasma nitridation process on the plurality of substrates.

A method of forming a semiconductor structure, comprising:

• positioning a plurality of substrates in contact with a substrate holder in a quartz envelope disposed in an interior volume of a chamber, the substrates each having a surface with an oxide layer formed thereon, the oxide layer having a via extending at least partially therein;
• heating the plurality of substrates with a heater positioned within the interior volume of the chamber and outside of the quartz envelope;
• and
• introducing a flow of NH3 to inside the quartz envelope, the introducing the flow of NH3 to inside the quartz envelope comprising:
• providing NH3 to a gas injection assembly disposed in the interior volume of the chamber;
• flowing the NH3 to the interior volume outside of the quartz envelope and then to the inside of the quartz envelope at a flow rate;
• maintaining a temperature of at least 600° C. in the interior volume while flowing the NH3 to the interior volume outside of the quartz envelope and then to the inside of the quartz envelope;
• and
• maintaining a pressure of at least 10 atm in the interior volume while flowing the NH3 to the interior volume outside of the quartz envelope and then to the inside of the quartz envelope to perform a plasma nitridation process on the plurality of substrates.