Semiconductor sensor and method of manufacturing the same

A semiconductor sensor, comprising a gas-sensing device and an integrated circuit electrically connected to the gas-sensing device, and the gas-sensing device comprising:

• a substrate having a sensing area and an interconnection area in the vicinity of the sensing area;
• an inter-metal dielectric (IMD) layer formed above the substrate in the sensing area and in the interconnection area;
• an interconnect structure formed in the interconnection area, and the interconnect structure comprising:
• a tungsten layer buried in the IMD layer;
• a first TiO2-patterned portion formed on the top surface of the tungsten layer;
• and
• a first Pt-patterned portion formed on the first TiO2-patterned portion and directly contacting the top surface of the tungsten layer;
• and
• a sensing electrode formed on the IMD layer in the sensing area, and the sensing electrode comprises:
• a patterned TiO2 layer formed above the IMD layer;
• and
• a patterned platinum (Pt) layer formed above the patterned TiO2 layer,
• wherein the gas-sensing device and the integrated circuit are formed as different chips and electrically connected to each other by wire bonding.