Susceptor for holding a semiconductor wafer, method for depositing an epitaxial layer on a front side of a semiconductor wafer, and semiconductor wafer with epitaxial layer
AssigneeSiltronic AG
InventorJoerg Haberecht
Life of this patent
Estimating the term…
Abstract
A susceptor for holding a semiconductor wafer during the deposition of an epitaxial layer on a front side of the semiconductor wafer, has a susceptor ring and a susceptor base, and recesses below the susceptor ring in the susceptor base which are arranged in a manner distributed rotationally symmetrically. The radial width of the recesses is greater than the radial width of the susceptor such that the susceptor ring does not completely cover the recesses.
Claims12
A susceptor for holding a semiconductor wafer during the deposition of an epitaxial layer on a front side of the semiconductor wafer, comprising
- a susceptor ring having a ledge for placing the semiconductor wafer in an edge region of a rear side of the semiconductor wafer;
- and
- a susceptor base, wherein the susceptor ring is positioned about a center of the susceptor base on the susceptor base, wherein
- the susceptor base contains recesses which are present below the susceptor ring and which are arranged in a manner distributed rotationally symmetrically on the susceptor base and each have a radial width that is greater than a radial width of the susceptor ring.
A semiconductor wafer with an epitaxial layer, wherein the thickness of the epitaxial layer in first partial regions of the edge region of the semiconductor wafer with epitaxial layer is thinner than in second partial regions of the edge region, and material depositions are present on the rear side of the semiconductor wafer, by means of which the total thickness of the semiconductor wafer with the epitaxial layer in the first partial regions is matched to the total thickness of the semiconductor wafer with the epitaxial layer in the second partial regions.
Dependencies are inferred from the claim text.