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AssigneeTechnic France
InventorsChristian Pizzetti, Marine Cazes, Jérôme Daviot, Philippe Vernin
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The invention relates to a solution for etching titanium based materials, comprising from about 27 w % to about 39 w % hydrogen peroxide, from about 0.2 w % to about 0.5 w % potassium hydroxide, and at about 0.002 w % to about 0.02 w % 1,2-Diaminocyclohexane-N,N,N,N Tetra acetic Acid (CDTA), the rest being water, said solution comprising no corrosion inhibitor, and said solution having a pH comprised between about 7 and about 8. The invention further relates to a chemical composition for preparing such a solution by mixing said composition with concentrated hydrogen peroxide, said chemical composition comprising potassium hydroxide from about 5 w % to about 30 w %, C.D.T.A. at a concentration ranging from about 1% to about 5% of the potassium hydroxide concentration, the rest being water. The invention also relates to a method of etching a Titanium, Titanium nitride or Titanium Tungsten barrier layer from a microelectronic device, said method comprising contacting the Titanium, Titanium nitride or Titanium tungsten barrier layer with the solution for a time sufficient to remove the Titanium, Titanium nitride or Titanium tungsten barrier layer.
A solution for etching titanium based materials, consisting of from about 27 wt. % to about 39 wt. % of hydrogen peroxide, from about 0.2 wt. % to about 0.5 wt. % of potassium hydroxide, and from about 0.002 wt. % to about 0.02 wt. % of 1,2-Diaminocyclohexane-N,N,N,N Tetra acetic Acid (CDTA), and
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