Metal oxide film, semiconductor device, and display device

A metal oxide film comprising In, M (M is Al, Ga, Y, or Sn), and Zn, wherein:

• the metal oxide film comprises a first crystal part and a second crystal part;
• the first crystal part has c-axis alignment;
• the second crystal part has no c-axis alignment;
• in the case where an electron diffraction pattern of the metal oxide film is observed by performing electron diffraction measurement on a cross section,
• the electron diffraction pattern comprises:
• a first region comprising a diffraction spot derived from the first crystal part;
• and
• a second region comprising a diffraction spot derived from the second crystal part;
• and
• an integrated intensity of luminance in the first region is higher than an integrated intensity of luminance in the second region.

A metal oxide film,

• wherein a first crystal part and a second crystal part are mixed in the metal oxide film,
• wherein the first crystal part has c-axis alignment in a direction perpendicular to a surface of the metal oxide film,
• wherein the second crystal part has no c-axis alignment in a direction perpendicular to a surface of the metal oxide film,
• wherein a third region and a fourth region are mixed in the metal oxide film,
• wherein the third region includes In, element M, Zn, and O,
• wherein the fourth region includes In, element M, Zn, and O,
• wherein element M in the third region and element M in the fourth region are Al, Ga, Y, or Sn,
• wherein atomic ratio of In to element M in the third region is higher than atomic ratio of In to element M in the fourth region
• wherein, in the case where an electron diffraction pattern of the metal oxide film is observed by performing electron diffraction measurement on a cross section, the electron diffraction pattern includes a first region including a diffraction spot derived from the first crystal part and a second region including a diffraction spot derived from the second crystal part, and
• wherein the integrated intensity of the luminance in the first region is more than one time and less than or equal to 40 times the integrated intensity of the luminance in the second region.

A metal oxide film,

• wherein a first crystal part and a second crystal part are mixed in the metal oxide film,
• wherein the first crystal part has c-axis alignment in a direction perpendicular to a surface of the metal oxide film,
• wherein the second crystal part has no c-axis alignment in a direction perpendicular to a surface of the metal oxide film,
• wherein existing proportion of the second crystal part is higher than existing proportion of the first crystal part,
• wherein, in the case where an electron diffraction pattern of the metal oxide film is observed by performing electron diffraction measurement on a cross section, the electron diffraction pattern includes a first region including a diffraction spot derived from the first crystal part and a second region including a diffraction spot derived from the second crystal part,
• wherein a third region and a fourth region are mixed in the metal oxide film,
• wherein the third region includes In, element M, Zn, and O,
• wherein the fourth region includes In, element M, Zn, and O,
• wherein element M in the third region and element M in the fourth region are Al, Ga, Y, or Sn,
• wherein atomic ratio of In to element M in the third region is higher than atomic ratio of In to element M in the fourth region.

A metal oxide film,

• wherein a first crystal part and a second crystal part are mixed in the metal oxide film,
• wherein the first crystal part has c-axis alignment in a direction perpendicular to a surface of the metal oxide film,
• wherein the second crystal part has no c-axis alignment in a direction perpendicular to a surface of the metal oxide film,
• wherein existing proportion of the second crystal part is higher than existing proportion of the first crystal part,
• wherein, in the case where an electron diffraction pattern of the metal oxide film is observed by performing electron diffraction measurement on a cross section, the electron diffraction pattern includes a first region including a diffraction spot derived from the first crystal part and a second region including a diffraction spot derived from the second crystal part, and integrated intensity of luminance in the first region is higher than integrated intensity of luminance in the second region,
• wherein a third region and a fourth region are mixed in the metal oxide film,
• wherein the third region includes In, element M, Zn, and O,
• wherein the fourth region includes In, element M, Zn, and O,
• wherein element M in the third region and element M in the fourth region are Al, Ga, Y, or Sn,
• wherein atomic ratio of In to element M in the third region is higher than atomic ratio of In to element M in the fourth region.