Compound semiconductor, method for manufacturing same, and nitride semiconductor
AssigneeJapan Science and Technology Policy
InventorsHiroshi Fujioka, Kohei Ueno
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Abstract
A compound semiconductor has a high electron concentration of 5×1019 cm−3 or higher, exhibits an electron mobility of 46 cm2/V·s or higher, and exhibits a low electric resistance, and thus is usable to produce a high performance semiconductor device. The present invention provides a group 13 nitride semiconductor of n-type conductivity that may be formed as a film on a substrate having a large area size at a temperature of room temperature to 700° C.
Claims12
A two-, three-, or four-component compound semiconductor containing nitrogen and one element selected from the group consisting of B, Al, Ga and In, which are group 13 elements,
- wherein:
- the compound semiconductor has a thin film shape,
- the compound semiconductor contains Si or Ge as an electron donor,
- the compound semiconductor contains oxygen as an impurity at 1×1017 cm−3 or higher,
- in a case where the compound semiconductor contains Si as the electron donor, the compound semiconductor has an electron concentration of 8.09×1019 cm−3 or higher and has n-type conductivity,
- in a case where the compound semiconductor contains Ge as the electron donor, the compound semiconductor has an electron concentration of 3.04×1020 cm−3 or higher and has n-type conductivity, and
- the compound semiconductor exhibits an electron mobility, measured at room temperature, of 46 cm2/V·s or higher.
Dependencies are inferred from the claim text.