Back to results
US 10,865,343 B2Granted
Plasma etching method
AssigneeAjou University Industry-Academic Cooperation Foundation
InventorsChang-Koo Kim, Jun-Hyun Kim, Jin-Su Park
Life of this patent
Estimating the term…
Abstract
Provided is a plasma etching method comprising supplying heptafluoropropyl methyl ether (HFE) gas, argon (Ar) gas and oxygen (O2) gas to a plasma chamber receiving an etching target therein, thereby to plasma-etch the etching target.
Claims8
A plasma etching method comprising supplying heptafluoropropyl methyl ether (HFE) gas, argon (Ar) gas, and oxygen (O2) gas to a plasma chamber receiving an etching target therein, thereby to plasma-etch the etching target,
- wherein the plasma chamber is connected to a canister containing heptafluoropropyl methyl ether (HFE) in a liquid phase by a chamber connecting line, and
- wherein the supplying comprises:
- generating the HFE gas by heating the canister at a first temperature higher than a boiling point of the HFE and heating the chamber connecting line at a second temperature higher than the first temperature, and
- supplying the generated HFE gas to the plasma chamber through the chamber connecting line.
1 more element
Dependencies are inferred from the claim text.