Semiconductor controlled quantum interaction gates

A quantum interaction gate, comprising:

• a substrate;
• a depleted layer fabricated on said substrate;
• a first qudit having one or more control gates fabricated on said depleted layer to form a first plurality of qdots including one interaction qdot;
• a second qudit having one or more control gates fabricated on said depleted layer to form a second plurality of qdots including one interaction qdot;
• and
• wherein said interaction qdots of said first and second qudits are located closer to each other compared to all other first and second plurality of qdots so as to enable interaction between particles located therein.

A quantum interaction gate, comprising:

• a substrate;
• a depleted well fabricated on said substrate;
• a plurality of qudits, each qudit including one or more control gates fabricated on said depleted well to form a plurality of qdots including one interaction qdot, wherein each control gate functions to form a qdot on either side thereof for holding a quantum state of at least one particle;
• and
• wherein said one interaction qdot in at least two qudits are located closer to each other compared to a remaining plurality of qdots so as to enable quantum interaction between particles located in said one interaction qdot in at least two qudits.

A method of quantum interaction, comprising:

• providing a substrate;
• fabricating a depleted layer over said substrate;
• fabricating on said depleted layer a first qudit having a first plurality of qdots and associated control gates including an interaction qdot;
• fabricating on said depleted layer a second qudit having a second plurality of qdots and associated control gates including an interaction qdot;
• wherein each qdot of said first plurality of qdots is formed on a side of an associated control gate in said first qudit and each qdot of said second plurality of qdots is formed on a side of an associated control gate in said second qudit;
• and
• wherein said interaction qdots are located sufficiently closer to each other compared to all other qdots in said first and second qudits so as to enable interaction between two particles located therein.