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US 10,851,456 B2Granted
Deposition of metal borides
AssigneeASM IP Holding B.V.
InventorsChiyu Zhu, Kiran Shrestha, Suvi Haukka
Life of this patent
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Abstract
A method for depositing a metal film onto a substrate is disclosed. In particular, the method comprises pulsing a metal halide precursor onto the substrate and pulsing a decaborane precursor onto the substrate. A reaction between the metal halide precursor and the decaborane precursor forms a metal film, specifically a metal boride.
Claims20
A method of forming a film having a metal boride comprising:
- providing a substrate for processing in a reaction chamber;
- performing a metal precursor deposition onto the substrate, the performing the metal precursor deposition step comprising:
- pulsing a metal precursor onto the substrate;
- and
- purging an excess of the metal precursor from the reaction chamber;
- and
- performing a decaborane precursor deposition onto the substrate, the performing the decaborane precursor deposition step comprising:
- pulsing a decaborane precursor onto the substrate, and
- purging an excess of the decaborane precursor from the reaction chamber;
- wherein the decaborane reaction to is not self-limiting to one monolayer due to decaborane decomposition,
- wherein the metal precursor comprises one of:
- titanium tetrachloride (TiCl4), niobium pentachloride (NbCl5), tantalum pentafluoride (TaF5), and niobium pentafluoride (NbF5),
- wherein a reaction between the metal halide precursor and the decaborane precursor forms a film comprising at least one of:
- titanium boride (TiB), tantalum boride (TaB), and niobium boride (NbB),
- wherein the metal precursor deposition step is repeated a predetermined number of times, and
- wherein the decaborane precursor deposition step is repeated a predetermined number of times.
13 more elements
A method of forming a film having a metal boride comprising:
- providing a substrate for processing in a reaction chamber;
- performing a metal precursor deposition onto the substrate, the performing the metal precursor deposition step comprising:
- pulsing a metal precursor onto the substrate;
- and
- purging the reaction chamber;
- and
- performing a decaborane precursor deposition onto the substrate, the performing the decaborane precursor deposition step comprising:
- pulsing a decaborane precursor onto the substrate, and
- purging the reaction chamber;
- wherein the decaborane reaction to is not self-limiting to one monolayer due to decaborane decomposition,
- wherein a reaction between the metal precursor and the decaborane precursor forms a film comprising at least one of:
- titanium boride (TiB), tantalum boride (TaB), and niobium boride (NbB),
- wherein the metal precursor deposition step is repeated a predetermined number of times, and
- wherein the decaborane precursor deposition step is repeated a predetermined number of times.
11 more elements
Dependencies are inferred from the claim text.