US 10,851,266 B2 · Slurry composition for polishing and method for polishing semiconductor thin film with steps of a high aspect ratio

Abstract

The present invention relates to a slurry composition for polishing and a method for polishing a semiconductor thin film with steps of a high aspect ratio, and more particularly, by comprising polishing particles, a compound represented by Chemical Formula 1 below, and a compound represented by Chemical Formula 2 below, to make a slurry composition for polishing that has a high polishing speed in high stepped regions while simultaneously protecting low stepped regions to obtain a high degree of flatness without leaving remaining steps after the completion of polishing, and a method for polishing a semiconductor thin film with steps of a high aspect ratio. in Chemical Formula 1, n is an integer of 1 to 10, in Chemical Formula 2, R1 to R4 are independently C1-C10 alkyl groups, and m is an integer of 1 to 10.

Claims13

Dependent claims

A slurry composition for polishing, comprising:

a) polishing particle dispersion at a concentration of 3 to 5 wt %, pH of 8 to 9;
and
b) an additive mixture solution at a concentration of 0.3 to 1.5 wt %, pH of 5 to 7;
wherein the additive mixture solution of b) includes a compound represented by Chemical Formula 1 below and a compound represented by Chemical Formula 2 below:
in Chemical Formula 1, n is an integer of 1 to 10,
in Chemical Formula 2, R1 to R4 are independently C1-C10 alkyl groups, and m is an integer of 1 to 10.

3 more elements

Dependencies are inferred from the claim text.

Slurry composition for polishing and method for polishing semiconductor thin film with steps of a high aspect ratio

Life of this patent

Slurry composition for polishing and method for polishing semiconductor thin film with steps of a high aspect ratio

Life of this patent

Abstract

Claims13