Compressive zone to reduce dicing defects

A semiconductor device comprising:

• a substrate having integrated circuits;
• a plurality of metallization layers comprising alternating layers of metal and dielectric on the substrate, the plurality of metallization layers having a peripheral region adjacent to a kerf region of the semiconductor device and containing a crack stop structure extending through the plurality of metallization layers, the crack stop structure comprising a plurality of vertically aligned and stacked metal-filled vias;
• a trench extending through the plurality of metallization layers and adjacent to the crack stop structure, the trench filled with a material that creates compressive stresses between the filled trench and the adjacent metallization layers to form a compressive zone adjacent to the crack stop structure.