Circuit board, semiconductor device including the same, and manufacturing method thereof

A semiconductor device, comprising:

• a circuit board, including:
• a core layer having stacked dielectric layers, through vias wrapped by the stacked dielectric layers and a patterned conductive plate disposed in between two adjacent stacked dielectric layers of the stacked dielectric layers,
• wherein the patterned conductive plate includes openings filled by sections of the stacked dielectric layers and sections of the through vias and is electrically isolated from the through vias;
• and
• build-up stacks disposed on opposite sides of the core layer, including conductive patterns electrically connected to the through vias;
• and
• a semiconductor package, disposed on one build-up stack and electrically connected to the through vias,
• wherein a bottom surface of the patterned conductive plate contacts the underlying layer of the two adjacent stacked dielectric layers, the overlying layer of the two adjacent stacked dielectric layers extends within the openings of the patterned conductive plate and covers the remaining surfaces of the patterned conductive plate, and the patterned conductive plate is electrically insulated from the build-up stacks.

A manufacturing method of a circuit board, comprising:

• depositing a conductive material to form first via portions;
• forming a first core dielectric layer laterally wrapping the first via portions, wherein the first core dielectric layer is formed after the first via portions are formed;
• forming a patterned conductive plate on the first core dielectric layer, the patterned conductive plate including openings exposing the first via portions;
• depositing a conductive material to form second via portions in the openings of the patterned conductive plate, wherein the second via portions are electrically insulated from the patterned conductive plate;
• and
• wrapping the second via portions in a second core dielectric layer.