Wideband termination for high power applications
AssigneeTTM Technologies, Inc.
InventorsOmar Eldaiki, Chong Mei
Life of this patent
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Abstract
A wideband termination circuit layout is provided for high power applications. The circuit layout may include a dielectric layer having a first surface and a second surface. The circuit layout may also include an input port disposed over the first surface. The circuit layout may further include at least two resistive film patches disposed over the first surface of the dielectric layer and a tuning line between the at least two resistive films disposed over the first surface of the dielectric layer. The at least two resistive film patches are connected in series with the at least one tuning line.
Claims20
A wideband termination circuit layout for high power applications, the circuit comprising:
- a dielectric layer having a first surface and a second surface;
- an input port disposed over the first surface;
- at least two resistive film patches disposed over the first surface of the dielectric layer;
- and
- a tuning line between the at least two resistive films disposed over the first surface of the dielectric layer,
- wherein the at least two resistive film patches are connected in series with the at least one tuning line.
A wideband termination circuit for high power applications, the circuit comprising:
- an input port;
- a first termination resistor having a first end connected to the input port and a second end connecting to a first ground;
- a second termination resistor having a first end and a second end connecting to a second ground;
- a Pi impedance network or C-L-C network equivalent to an equivalent transmission line with a characteristic impedance ZTL, and an electric length I,
- wherein the equivalent transmission line is connected between the first end of first termination resistor and the first end of the second termination resistor,
- wherein the equivalent transmission line is connected to the input port,
- wherein the characteristic impedance ZTL is equal to the resistance of the second termination resistor at an RF frequency F0.
Dependencies are inferred from the claim text.