Solid-state imaging device having a photoelectric converter with multiple semiconductor regions, imaging system and movable object

A solid-state imaging device comprising:

• a plurality of pixels, each of the plurality of pixels including a photoelectric converter,
• wherein the photoelectric converter includes a first semiconductor region of a first conductivity type, a second semiconductor region of a second conductivity type provided under the first semiconductor region, and a third semiconductor region of the first conductivity type provided under the second semiconductor region,
• wherein the second semiconductor region has a first end portion and a second end portion opposing to the first end portion,
• wherein the third semiconductor region has a first region and a second region, each of the first region and the second region overlaps with the second semiconductor region in a plan view, and the first region and the second region are spaced apart from each other from a part of the first end portion to a part of the second end portion, and
• wherein a semiconductor region provided between the first region and the second region of the third semiconductor region overlaps with the part of the first end portion and the part of the second end portion in the plan view and is provided to be extended from the part of the first end portion to the part of the second end portion in the plan view.