Control circuit and method for avoiding reverse recovery of a power transistor

Abstract

The present document describes a control circuit and a method for controlling a power transistor, wherein the power transistor has a drain, a gate and a source. The power transistor has a body diode. The control circuit is configured to predict a time instant at which a drain potential at the drain falls below a source potential at the source of the power transistor by more than a diode threshold voltage of the body diode. Furthermore, the control circuit is configured to apply a pre-bias potential and/or provide a pre-bias current to the gate of the power transistor in dependence the predicted time instant, such that a conducting channel between the drain and the source is provided, which at least partially takes over current which would otherwise flow through the body diode.

Dependencies are inferred from the claim text.