Circuitry and method for GaN device

A method for controlling a gallium nitride (GaN) device, comprising:

• providing a negative bias voltage to a gate of the GaN device by decreasing a voltage of zero to the negative bias voltage;
• turning on or off a positive voltage to a drain of the GaN device during the decreasing;
• controlling the turning on of the positive voltage to the drain of the GaN device based on provision of the negative bias voltage to the gate, such that the positive voltage to the drain is turned on after the negative bias voltage is provided to the gate and after an actual voltage at the gate approaches the negative bias voltage;
• removing the negative bias voltage from the gate of the GaN device by increasing the negative bias voltage to the voltage of zero;
• and
• controlling the turning off of the positive voltage to the drain of the GaN device based on removal of the negative bias voltage from the gate, such that the positive voltage to the drain is turned off after the negative bias voltage is removed from the gate and before the actual voltage at the gate approaches the voltage of zero.