Surface emitting laser

A surface emitting laser comprising:

• a conductive substrate;
• a first epitaxial semiconductor reflection layer on an upper surface of the conductive substrate;
• a metal bonding layer between the conductive substrate and the first epitaxial semiconductor reflection layer;
• a laser structure layer on an upper surface of the first epitaxial semiconductor reflection layer, wherein the laser structure layer has a first epitaxial current-blocking layer, and the first epitaxial current-blocking layer has a first current opening for current passing;
• a second epitaxial semiconductor reflection layer on an upper surface of the laser structure layer;
• a first electrode layer on the upper surface of the laser structure layer for packaging and electrical conduction;
• wherein the first epitaxial current-blocking layer is grown by a semiconductor epitaxy process, and a type of a semiconductor material of the first epitaxial current-blocking layer is different from a type of a semiconductor material of the laser structure layer;
• wherein the surface emitting laser further comprises two conductive metals, portions of the metal bonding layer respectively corresponding to two sides of the first current opening form two recessed grooves;
• the conductive metals are in the recessed grooves, respectively;
• surfaces of the conductive metals are flush with a surface of the metal bonding layer and bonded to the first epitaxial semiconductor reflection layer.

A surface emitting laser comprising:

• a conductive substrate;
• a metal bonding layer on an upper surface of the conductive substrate;
• a laser structure layer on an upper surface of the metal bonding layer, wherein the laser structure layer has a first epitaxial current-blocking layer, and the first epitaxial current-blocking layer has a first current opening for current passing;
• an epitaxial semiconductor reflection layer on an upper surface of the laser structure layer;
• a first electrode layer on an upper surface of the epitaxial semiconductor reflection layer for packaging and electrical conduction;
• wherein the first epitaxial current-blocking layer is grown by a semiconductor epitaxy process, and a type of a semiconductor material of the first epitaxial current-blocking layer is different from a type of a semiconductor material of the laser structure layer;
• wherein the surface emitting laser further comprises a transparent conductive layer and a first conductive metal;
• the transparent conductive layer is between the metal bonding layer and the laser structure layer;
• a first portion of the transparent conductive layer corresponding to the first current opening forms a first recessed groove;
• the first conductive metal is in the first recessed groove, and a surface of the first conductive metal is flush with a surface of the transparent conductive layer and bonded to the laser structure layer.

A surface emitting laser comprising:

• a conductive substrate;
• a first epitaxial semiconductor reflection layer on an upper surface of the conductive substrate;
• a metal bonding layer between the conductive substrate and the first epitaxial semiconductor reflection layer;
• a laser structure layer on an upper surface of the first epitaxial semiconductor reflection layer, wherein the laser structure layer has a first epitaxial current-blocking layer, and the first epitaxial current-blocking layer has a first current opening for current passing;
• a second epitaxial semiconductor reflection layer on an upper surface of the laser structure layer;
• a first electrode layer on the upper surface of the laser structure layer for packaging and electrical conduction;
• wherein the first epitaxial current-blocking layer is grown by a semiconductor epitaxy process, and a type of a semiconductor material of the first epitaxial current-blocking layer is different from a type of a semiconductor material of the laser structure layer;
• wherein the surface emitting laser further comprises a transparent conductive layer and a first conductive metal;
• the transparent conductive layer is between the metal bonding layer and the first epitaxial semiconductor reflection layer;
• a first portion of the transparent conductive layer corresponding to the first current opening forms a first recessed groove;
• the first conductive metal is in the first recessed groove, and a surface of the first conductive metal is flush with a surface of the transparent conductive layer and bonded to the first epitaxial semiconductor reflection layer.

A surface emitting laser comprising:

• a conductive substrate;
• a metal bonding layer on an upper surface of the conductive substrate;
• a laser structure layer on an upper surface of the metal bonding layer, wherein the laser structure layer has a first epitaxial current-blocking layer, and the first epitaxial current-blocking layer has a first current opening for current passing;
• an epitaxial semiconductor reflection layer on an upper surface of the laser structure layer;
• a first electrode layer on an upper surface of the epitaxial semiconductor reflection layer for packaging and electrical conduction;
• wherein the first epitaxial current-blocking layer is grown by a semiconductor epitaxy process, and a type of a semiconductor material of the first epitaxial current-blocking layer is different from a type of a semiconductor material of the laser structure layer;
• wherein the surface emitting laser further comprises a transparent conductive layer, a first conductive metal, and an insulating layer;
• the transparent conductive layer is between the metal bonding layer and the laser structure layer, the first conductive metal is on a first portion of the transparent conductive layer corresponding to the first current opening, and the first conductive metal corresponds to the first current opening;
• the insulating layer is on a surface of the transparent conductive layer and surrounds the first conductive metal;
• a surface of the insulating layer is flush with a surface of the first conductive metal and bonded to the laser structure layer.

A surface emitting laser comprising:

• a conductive substrate;
• a first epitaxial semiconductor reflection layer on an upper surface of the conductive substrate;
• a metal bonding layer between the conductive substrate and the first epitaxial semiconductor reflection layer;
• a laser structure layer on an upper surface of the first epitaxial semiconductor reflection layer, wherein the laser structure layer has a first epitaxial current-blocking layer, and the first epitaxial current-blocking layer has a first current opening for current passing;
• a second epitaxial semiconductor reflection layer on an upper surface of the laser structure layer;
• a first electrode layer on the upper surface of the laser structure layer for packaging and electrical conduction;
• wherein the first epitaxial current-blocking layer is grown by a semiconductor epitaxy process, and a type of a semiconductor material of the first epitaxial current-blocking layer is different from a type of a semiconductor material of the laser structure layer;
• wherein the surface emitting laser further comprises a transparent conductive layer, a first conductive metal, and an insulating layer;
• the transparent conductive layer is between the metal bonding layer and the first epitaxial semiconductor reflection layer;
• the first conductive metal is on a first portion of the transparent conductive layer corresponding to the first current opening, and the first conductive metal corresponds to the first current opening;
• the insulating layer is on a surface of the transparent conductive layer and surrounds the first conductive metal;
• a surface of the insulating layer is flush with a surface of the first conductive metal and bonded to the first epitaxial semiconductor reflection layer.

A surface emitting laser comprising:

• a conductive substrate;
• a metal bonding layer on an upper surface of the conductive substrate;
• a laser structure layer on an upper surface of the metal bonding layer, wherein the laser structure layer has a first epitaxial current-blocking layer, and the first epitaxial current-blocking layer has a first current opening for current passing;
• an epitaxial semiconductor reflection layer on an upper surface of the laser structure layer;
• a first electrode layer on an upper surface of the epitaxial semiconductor reflection layer for packaging and electrical conduction;
• wherein the first epitaxial current-blocking layer is grown by a semiconductor epitaxy process, and a type of a semiconductor material of the first epitaxial current-blocking layer is different from a type of a semiconductor material of the laser structure layer;
• wherein the surface emitting laser further comprises a transparent conductive layer and a layer of conductive metal;
• the transparent conductive layer is between the metal bonding layer and the laser structure layer, the layer of conductive metal is between the transparent conductive layer and the laser structure layer;
• the layer of conductive metal is a whole layer corresponding to the transparent conductive layer and the laser structure layer.

A surface emitting laser comprising:

• a conductive substrate;
• a first epitaxial semiconductor reflection layer on an upper surface of the conductive substrate;
• a metal bonding layer between the conductive substrate and the first epitaxial semiconductor reflection layer;
• a laser structure layer on an upper surface of the first epitaxial semiconductor reflection layer, wherein the laser structure layer has a first epitaxial current-blocking layer, and the first epitaxial current-blocking layer has a first current opening for current passing;
• a second epitaxial semiconductor reflection layer on an upper surface of the laser structure layer;
• a first electrode layer on the upper surface of the laser structure layer for packaging and electrical conduction;
• wherein the first epitaxial current-blocking layer is grown by a semiconductor epitaxy process, and a type of a semiconductor material of the first epitaxial current-blocking layer is different from a type of a semiconductor material of the laser structure layer;
• wherein the surface emitting laser further comprises a transparent conductive layer and a layer of conductive metal;
• the transparent conductive layer is between the metal bonding layer and the first epitaxial semiconductor reflection layer, the layer of conductive metal is between the transparent conductive layer and the first epitaxial semiconductor reflection layer;
• the layer of conductive metal is a whole layer corresponding to the transparent conductive layer and the first epitaxial semiconductor reflection layer.