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US 10,770,656 B2Granted
Method for manufacturing phase change memory
AssigneeInternational Business Machines Corporation
InventorsGloria Wing Yun Fraczak, Matthew Brightsky, Chung Hon Lam, Fabio Carta, Robert Bruce, Takeshi Masuda, Koukou Suu
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Abstract
Method(s) and apparatuses for forming a phase change memory. A method includes: forming a crystalline phase-change layer at a first position in along a surface of a first semiconductor layer, and forming an amorphous phase-change layer at a second position along the surface of a second semiconductor layer, wherein the crystalline phase-change layer and the amorphous phase-change layer are in contact.
Claims18
A method for manufacturing a phase-change memory the method comprising:
- forming a crystalline phase-change layer at a first position within a recess of an insulation layer;
- and
- forming an amorphous phase-change layer at second position which differs from the first position within the recess;
- and
- forming a recess liner layer that bounds side and bottom portions of the recess.
2 more elements
A method comprising:
- forming a crystalline phase-change layer at a first position within a recess along a surface of a first semiconductor layer;
- forming an amorphous phase-change layer at a second position within the recess, wherein the crystalline phase-change layer and the amorphous phase-change layer contact;
- and
- forming a recess liner layer that bounds side and bottom portions of the recess.
1 more element
Dependencies are inferred from the claim text.