Lattice matched tunnel barriers for perpendicularly magnetized Heusler alloys
AssigneeInternational Business Machines Corporation
InventorAakash Pushp
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Abstract
A device comprising a first magnetic layer (e.g., Co2MnSi Heusler alloy or a tetragonally distorted perpendicularly magnetized (PMA) Heusler alloy such as Mn3Ga, Mn3Ge, etc.) and a second magnetic layer (e.g., Co2MnSi Heusler alloy or a tetragonally distorted perpendicularly magnetized (PMA) Heusler alloy such as Mn3Ga, Mn3Ge, etc.), and a metal halide tunnel barrier in between the first and second magnetic layers, wherein the metal halide tunnel barrier (e.g., NaF, NaCl, NaBr, LiF, LiCl, and LiBr or their combination) is lattice matched within a predetermined limit (e.g. 5%) of both the first and second magnetic layers.
Claims26
A device comprising a first magnetic layer, a second magnetic layer, and a metal halide tunnel harrier between the first and second magnetic layers, wherein the metal halide tunnel barrier is lattice matched to within 5% of both the first and second magnetic layers, and wherein the first layer, the second layer, and the tunnel barrier are in proximity with each other so that spin-polarized current can pass from one of the magnetic layers to the other of the magnetic layers.
A device comprising:
- a first magnetic layer;
- a metal halide tunnel barrier underlying the first magnetic layer;
- and
- a second magnetic layer underlying the tunnel barrier,
- wherein:
- the first magnetic layer, the metal halide tunnel barrier, and the second magnetic layer are in proximity with each other, such that they form a magnetic tunnel junction,
- the metal halide tunnel barrier is composed of any one of, or a combination of, NaF, NaCl, NaBr, LiF, LiCl, and LiBr, and
- at least one of the magnetic layers is formed from a Heusler alloy.
Dependencies are inferred from the claim text.