Reflectors having overall mesa shapes
AssigneeFacebook Technologies, LLC
InventorsDaniel Bryce Thompson, James Small
Life of this patent
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Abstract
Disclosed are techniques related to reflectors having overall mesa shapes. Such a reflector may be formed over an overall mesa-shaped, layered structure of an apparatus for emitting light. The overall mesa-shaped, layered structure may comprise a mesa complement structure, a first-type doped semiconductor, a light emission layer, and a second-type doped semiconductor arranged in layers. Thus, the reflector may be configured to collimate light that emits from the light emission layer and reaches the reflector through the mesa complement structure.
Claims20
An apparatus for emitting light, comprising:
- a mesa complement structure;
- a first-type doped semiconductor;
- a light emission layer;
- a second-type doped semiconductor;
- and
- a reflector,
- wherein the mesa complement structure, the first-type doped semiconductor, the light emission layer, and the second-type doped semiconductor are arranged in layers and form an overall mesa-shaped, layered structure, and
- wherein the reflector is formed on the overall mesa-shaped, layered structure and configured to collimate light that emits from the light emission layer and reaches the reflector through the mesa complement structure.
A method, comprising:
- forming a mesa-shaped mask at a surface of a layered semiconductor device, wherein the layered semiconductor device comprises a first-type doped semiconductor, a light emission layer, and a second-type doped semiconductor;
- etching the mesa-shaped mask and the layered semiconductor device to form an overall mesa-shaped, layered structure, wherein the overall mesa-shaped, layered structure comprises a mesa complement structure and a truncated mesa-shaped, layered structure, wherein the mesa complement structure corresponds to part of the mesa-shaped mask, wherein the truncated mesa-shaped, layered structure corresponds to part of the layered semiconductor device, and wherein the mesa complement structure augments the truncated mesa-shaped, layered structure to form the overall mesa-shaped, layered structure;
- and
- forming a reflector over the overall mesa-shaped, layered structure, thereby enabling collimation of light that emits from the light emission layer and reaches the reflector through the mesa complement structure.
An apparatus fabricated by a method comprising:
- forming a mesa-shaped mask at a surface of a layered semiconductor device, wherein the layered semiconductor device comprises a first-type doped semiconductor, a light emission layer, and a second-type doped semiconductor;
- etching the mesa-shaped mask and the layered semiconductor device to form an overall mesa-shaped, layered structure, wherein the overall mesa-shaped, layered structure comprises a mesa complement structure and a truncated mesa-shaped, layered structure, wherein the mesa complement structure corresponds to part of the mesa-shaped mask, wherein the truncated mesa-shaped, layered structure corresponds to part of the layered semiconductor device, and wherein the mesa complement structure augments the truncated mesa-shaped, layered structure to form the overall mesa-shaped, layered structure;
- and
- forming a reflector over the overall mesa-shaped, layered structure, thereby enabling collimation of light that emits from the light emission layer and reaches the reflector through the mesa complement structure.
Dependencies are inferred from the claim text.