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US 10,770,623 B2Granted
Light emitting diode and electroluminescent display device
AssigneeLG Display Co., Ltd.
InventorsJi-Yeon Kang, Kyung-Kook Jang, So-Mang Kim
Life of this patent
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Abstract
An emitting diode includes a first electrode in a first pixel; a first emitting layer positioned on the first electrode and in the first pixel and including a first amorphous oxide semiconductor material and a first quantum dot, wherein the first amorphous oxide semiconductor material includes an indium atom, a gallium atom and a zinc atom; and a second electrode covering the first emitting layer.
Claims20
An emitting diode, comprising:
- a first electrode in a first pixel;
- a first emitting layer positioned on the first electrode and including a first amorphous oxide semiconductor material and a first quantum dot, wherein the first amorphous oxide semiconductor material includes an indium atom, a gallium atom and a zinc atom;
- and a second electrode covering the first emitting layer;
- wherein the first amorphous oxide semiconductor material has an energy level matching an energy level of the first quantum dot and the matched energy level enhances a charge transfer property of the emitting diode;
- further comprising a second emitting layer in a second pixel and including a second amorphous oxide semiconductor material and a second quantum dot, wherein the second amorphous oxide semiconductor material includes an indium atom, a gallium atom and a zinc atom.
2 more elements
An electroluminescent display device including an emitting diode on a substrate, comprising:
- a first electrode in a first pixel;
- a first emitting layer positioned on the first electrode and including a first amorphous oxide semiconductor material and a first quantum dot, wherein the first amorphous oxide semiconductor material includes an indium atom, a gallium atom and a zinc atom;
- and a second electrode covering the emitting layer;
- and a thin film transistor positioned between the substrate and the emitting diode, and connected to the first electrode, wherein the first amorphous oxide semiconductor material has an energy level matching an energy level of the first quantum dot and the matched energy level enhances a charge transfer property of the emitting diode;
- further comprising a second emitting layer in a second pixel and including a second amorphous oxide semiconductor material and a second quantum dot, wherein the second amorphous oxide semiconductor material includes an indium atom, a gallium atom and a zinc atom.
2 more elements
An electroluminescent display device, comprising:
- a substrate including a first pixel;
- an emitting diode on the substrate;
- a thin film transistor positioned between the substrate and the emitting diode, and connected to the emitting diode;
- and a first color conversion layer in the first pixel, wherein the first color conversion layer includes a first amorphous oxide semiconductor material and a first quantum dot, and the first amorphous oxide semiconductor material includes an indium atom, a gallium atom and a zinc atom;
- further comprising a second color conversion layer in a second pixel and including a second amorphous oxide semiconductor material and a second quantum dot, wherein the second amorphous oxide semiconductor material includes the indium atom, the gallium atom and the zinc atom.
2 more elements
Dependencies are inferred from the claim text.