Light-emitting element and light-emitting element package comprising same

A light-emitting element comprising:

• a substrate;
• a first conductive-type semiconductor layer disposed on the substrate and including at least one first recess;
• a first electrode directly contacting an upper surface of the first conductive-type semiconductor layer;
• a superlattice layer disposed on the first conductive-type semiconductor layer and including at least one second recess;
• an active layer disposed on the superlattice layer and including at least one third recess;
• an electron blocking layer disposed on the active layer and including at least one fourth recess;
• and
• a second conductive-type semiconductor layer disposed on the electron blocking layer,
• wherein the second conductive-type semiconductor layer includes a first layer including MgN and a second layer including GaN;
• wherein the first layer and the second layer of the second conductive-type semiconductor layer are provided in a plural number and the plurality of first layers and the plurality of second layers are alternately stacked,
• wherein the at least one first recess, the at least one second recess. the at least one third recess, and the at least one fourth recess are overlapped with each other,
• wherein the at least one first recess includes a first depth,
• wherein the at least one second recess includes a second depth,
• wherein the at least one third recess includes a third depth,
• wherein the at least one fourth recess includes a fourth depth,
• wherein the first depth is less than the fourth depth,
• wherein the second conductive-type semiconductor layer includes at least one protrusion protruding toward the substrate,
• wherein a height of the protrusion is less than the fourth depth,
• wherein a distance between a lowest portion of the at least one first recess in the first conductive-type semiconductor layer and an upper surface of the substrate is less than a distance between a lower surface of the first electrode and the upper surface of the substrate, and
• wherein a distance between a topmost portion of the at least one first recess in the first conductive-type semiconductor layer and the upper surface of the substrate is substantially equal to a distance between the lower surface of the first electrode and the upper surface of the substrate.

A light-emitting element package comprising:

• a body including a cavity;
• a lead frame installed on the body;
• and
• a light-emitting element electrically connected to the lead frame,
• wherein the light-emitting element comprises:
• a substrate;
• a first conductive-type semiconductor layer disposed on the substrate and including at least one first recess;
• a first electrode directly contacting an upper surface of the first conductive-type semiconductor layer;
• a superlattice layer disposed on the first conductive-type semiconductor layer and including at least one second recess;
• an active layer disposed on the superlattice layer and including at least one third recess;
• an electron blocking layer disposed on the active layer and including at least one fourth recess;
• and
• a second conductive-type semiconductor layer disposed on the electron blocking layer,
• wherein the at least one first recess, the at least one second recess, the at least one third recess, and the at least one fourth recess are overlapped with each other,
• wherein the at least one first recess includes a first depth,
• wherein the at least one second recess includes a second depth,
• wherein the at least one third recess includes a third depth,
• wherein the at least one fourth recess includes a fourth depth,
• wherein the first depth is less than the fourth depth,
• wherein the second conductive-type semiconductor layer includes at least one protrusion protruding toward the substrate,
• wherein a height of the protrusion is less than the fourth depth,
• wherein a distance between a lowest portion of the at least one first recess in the first conductive-type semiconductor layer and an upper surface of the substrate is less than a distance between a lower surface of the first electrode and the upper surface of the substrate, and
• wherein a distance between a topmost portion of the at least one first recess in the first conductive-type semiconductor layer and the upper surface of the substrate is substantially equal to a distance between the lower surface of the first electrode and the upper surface of the substrate.