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US 10,770,621 B2Granted
Semiconductor wafer
AssigneeStanley Electric Co., Ltd.
InventorToshiyuki Obata
Life of this patent
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Abstract
A semiconductor wafer has, on one surface of a sapphire substrate, an element layer including an n-type layer, an active layer, and a p-type layer, and is characterized in that the surface of the element layer is bent in a convex way, and the curvature thereof is 530-800 km−1.
Claims19
A semiconductor wafer comprising:
- an element layer comprising at least three layers including an n-type layer, an active layer, and a p-type layer on one surface of a sapphire substrate, wherein the element layer is made of a group III nitride single crystal layer,
- wherein a surface of the element layer is bent in a convex way, and a curvature thereof is 530 km−1 to 800 km−1, and
- wherein the group III nitride single crystal layer is made of an AlGaInN layer satisfying a composition represented by AlxInyGazN, wherein x, v, and z are rational numbers satisfying 0.3≤x≤1.0, 0≤y 0.7, and 0≤z≤0.7, and x+y+z=1.0.
A semiconductor wafer comprising:
- an element layer comprising at least three layers including an n-type layer, an active layer, and a p-type layer on one surface of a sapphire substrate,
- wherein a surface of the element layer is bent in a convex way, and a curvature thereof is 530 km−1 to 800 km−1 and
- wherein a buffer layer made of AlxInyGazN, wherein x, y, and z are rational numbers satisfying 0.8≤x≤1.0, 0≤y≤0.2, and 0≤z≤0.2, and x+y+z=1.0 included between the one surface of the sapphire substrate and the element layer.
A semiconductor wafer comprising group III nitride single crystal layers on one surface of a sapphire substrate, comprising:
- a sapphire substrate having one surface of predetermined plane orientation;
- an element layer having a laminated structure including an n-type layer made of group III nitride single crystal layer, an active layer made of group III nitride single crystal layer, and a p-type layer made of group III nitride single crystal layer, is on the one surface of the sapphire substrate;
- wherein the active layer is positioned between the n-type layer and the p-type layer,
- wherein the group III nitride single crystal layers comprise an AlGaInN layer satisfying a composition represented by AlxInyGazN, wherein x, y, and z are rational numbers satisfying 0.3≤x≤1.0, 0≤y 0.7, and 0≤z≤0.7, and x+y+z=1.0, and
- wherein a surface of the element layer is bent in a convex way, and a curvature thereof is 530 km−1 to 800 km−1.
2 more elements
A semiconductor light emitting device comprising group III nitride single crystal layers on one surface of a sapphire substrate, comprising:
- a sapphire substrate having one surface of predetermined plane orientation;
- an element layer having laminated structure including an n-type layer made of group III nitride single crystal layer, an active layer made of group III nitride single crystal layer, and a p-type layer made of group III nitride single crystal layer, is on the one surface of the sapphire substrate,
- wherein the active layer is positioned between the n-type layer and the p-type layer,
- wherein the group III nitride single crystal layers comprise an AlGaInN layer satisfying a composition represented by AlxInyGazN, wherein x, y, and z are rational numbers satisfying 0.3≤x≤1.0, 0≤y 0.7, and 0≤z≤0.7, and x+y+z=1.0,
- wherein an n-electrode is on the n-type layer and a p-electrode is on the p-type layer, and
- wherein a surface of the element layer is bent in a convex way, and a curvature thereof is 530 km−1 to 800 km−1.
3 more elements
A method for producing a semiconductor light emitting device, comprising:
- preparing a semiconductor wafer comprising an element layer made of at least three layers including an n-type layer, an active layer, and a p-type layer on one surface of a sapphire substrate, wherein:
- the element layer is made of a group III nitride single crystal layer,
- the group III nitride single crystal layer is made of an AlGaInN layer satisfying a composition represented by AlxInyGazN, wherein x, y, and z are rational numbers satisfying 0.3≤x≤1.0, 0≤y 0.7, and 0≤z≤0.7, and x+y+z=1.0, and
- a surface of the element layer is bent in a convex way, and a curvature thereof is 530 km−1 to 800 km−1;
- preparing a semiconductor wafer with an element circuit, by forming an n-electrode on the n-type layer and a p-electrode on the p-type layer of the semiconductor wafer;
- and
- cutting the semiconductor wafer with an element circuit into semiconductor chips.
4 more elements
Dependencies are inferred from the claim text.