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US 10,770,620 B2Granted
Epitaxial gallium nitride based light emitting diode and method of making thereof
AssigneeGlo AB
InventorsZhen Chen, Fariba Danesh, Fan Ren, Shuke Yan
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Abstract
A light emitting diode includes a n-doped region, a p-doped region, and a light emitting region located between the n-doped region and a p-doped region. The n-doped region includes a first GaN layer, at least one n-doped second GaN layer located over the first GaN layer, an AlGaN dislocation blocking layer located over the at least one n-doped second GaN layer, and a n-doped third GaN layer located over the AlGaN dislocation blocking film.
Claims5
A light emitting diode (LED), comprising:
- a n-doped region;
- a p-doped region;
- and
- a light emitting region located between the n-doped region and a p-doped region, wherein the n-doped region comprises a first GaN layer, at least one n-doped second GaN layer located over the first GaN layer, an AlGaN dislocation blocking layer located over the at least one n-doped second GaN layer, and a n-doped third GaN layer located over the AlGaN dislocation blocking film;
- wherein the light emitting region comprises:
- an epitaxial first strain-modulating film located on the n-type region;
- an epitaxial first cap layer located on the first strain-modulating film;
- an epitaxial second strain-modulating film located on the first cap layer;
- an epitaxial second cap layer located on the second strain-modulating film;
- an epitaxial third strain-modulating film located on the second cap layer;
- an epitaxial intermediate cap located on the third strain-modulating film;
- a first quantum well set located on the intermediate cap;
- an epitaxial AlGaN containing cap region located on the first quantum well set;
- a second quantum well set located on the AlGaN containing cap region;
- and
- an epitaxial third cap layer located on the second quantum well set.
13 more elements
Dependencies are inferred from the claim text.