Light emission diode with flip-chip structure and manufacturing method thereof

A manufacturing method of a flip-chip LED device, comprising:

• providing a group III-V substrate, and forming a group III-V stack layer on the group III-V substrate;
• forming a transparent conductor layer on the group III-V stack layer;
• coating a glue layer on the transparent conductor layer, and bonding the transparent conductor layer with a transparent protective substrate;
• performing a separation process, so as to remove the group III-V substrate from the group III-V stack layer;
• flipping a stacking structure formed by the group III-V stack layer, the transparent conductor layer and the transparent protective substrate once;
• defining a second conductivity plat illumination region and performing a metal deposition to define a second conductivity metal electrode on the second conductivity region, then performing a reactive ion etching process to etch through the group III-V stack layer which is located on the transparent conductor layer within a non-protective region;
• defining a first conductivity metal electrode region and a first conductivity metal electrode on the first conductivity metal electrode region, and coating the first conductivity metal electrode region with a first metal to form and pad the first conductivity metal electrode on the first conductivity metal electrode region;
• defining a second conductivity metal electrode region on the second conductivity region, and coating the second conductivity metal electrode region with a second metal;
• using a physical deposition to coat the first conductivity metal electrode, the second conductivity metal electrode and the transparent conductor layer with an insulating layer, such that the insulating layer covers the first conductivity metal electrode, the second conductivity metal electrode and the transparent conductor layer;
• and
• defining the first conductivity metal electrode and the second conductivity metal electrode and performing an etching process to expose the first conductivity metal electrode and the second conductivity metal electrode;
• wherein the glue layer is transparent optical glue layer and is in directly contact with the transparent protective substrate such that the transparent conductor layer, the glue layer and the transparent protective substrate form three successively-stacked transparent layers;
• defining the first conductivity metal electrode and the second conductivity metal electrode and coating the first conductivity metal electrode and the second conductivity metal electrode with a third metal to smooth the first conductivity metal electrode and the second conductivity metal electrode;
• and
• grinding and polishing the transparent protective substrate, and performing a cutting process to form a plurality of chip dies.