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US 10,770,615 B2Granted
Al—Ga—N template, a method for preparing Al—Ga—N template, and semiconductor device comprising Al—Ga—N template
AssigneeHc Semitek (Suzhou) Co., Ltd.
InventorsBinzhong Dong, Wubin Zhang, Haiping Ai, Peng Li, Jiangbo Wang
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Abstract
An AlGaN template including a substrate and an Al1-xGaxN crystallization thin film deposited on the substrate, where 0<x<1. A method for preparing the AlGaN template includes providing a substrate; and depositing an Al1-xGaxN crystallization thin film on the substrate.
Claims5
An AlGaN template, comprising a substrate and an Al1-xGaxN crystallization thin film deposited on the substrate, wherein
- 0<x<1;
- the Al1-xGaxN crystallization thin film comprises an AlGaN layer deposited on the substrate, and the AlGaN layer is doped with oxygen;
- and
- a content of oxygen in the first AlGaN layer gradually decreases or gradually increases from an interface between the substrate and the first AlGaN layer to a surface of the first AlGaN layer.
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An AlGaN template, comprising a substrate and an Al1-xGaxN crystallization thin film deposited on the substrate, wherein
- 0<x<1;
- the Al1-xGaxN crystallization thin film comprises a first AlGaN layer deposited on the substrate, and the first AlGaN layer is doped with oxygen;
- and
- the Al1-xGaxN crystallization thin film further comprises a second AlGaN layer deposited on the first AlGaN layer, the second AlGaN layer is doped with oxygen and the oxygen doped in the second AlGaN layer is uniformly distributed in the second AlGaN layer, and a thickness of the second AlGaN layer is greater than 1 nm.
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Dependencies are inferred from the claim text.