Photodiode with spinel oxide photoactive layer

A photodiode, comprising:

• an ohmic contact having a first work function;
• an inorganic substrate layer in continuous contact with the ohmic contact;
• a photoactive layer in continuous contact with the inorganic substrate layer;
• a light absorption layer in continuous contact with the photoactive layer;
• and
• a top electrode in contact with the light absorption layer, the top electrode having a second work function;
• wherein the inorganic substrate layer comprises a semiconductor;
• wherein the photoactive layer consists of ZnFe2O4 nanowires in N2, the ZnFe2O4 nanowires present at 80-90 vol % relative to a total volume of the photoactive layer;
• wherein the ZnFe2O4 nanowires have widths of 35-45 nm and lengths of 170-350 nm;
• wherein all ZnFe2O4 nanowires are physically adsorbed to the inorganic substrate layer and to the light absorption layer;
• wherein the inorganic substrate layer and the photoactive layer are both p-type semiconductors forming an isotype junction between each other;
• wherein the light absorption layer comprises at least one material selected from the group consisting of quantum dots, quantum rods, and quantum wires;
• and
• wherein the second work function is higher than the first work function.