Deep trench MOS barrier junction all around rectifier and MOSFET

A rectifier device, comprising:

• a first n-type semiconductor layer;
• a second n-type epitaxial semiconductor layer with lower doping concentration but larger depth than that of the first n-type semiconductor layer, deposed on top of the first n-type semiconductor layer;
• a p-type semiconductor layer having at least a first p-type continuous ring circle and a second p-type continuous ring circle deposed on at least the top surface of the second n-type semiconductor layer, wherein the first p-type semiconductor ring circle has larger radius than that of the second p-type semiconductor ring circle;
• a metal layer deposed above and completely overlap the p-type semiconductor layer;
• at least two enclosed deep trenches in ring circle comprising a first deep trench and a second deep trench, wherein
• the first deep trench in ring circle runs parallel to and is etched from top of the first p-type semiconductor ring circle down to the bottom of the second n-type semiconductor layer, wherein the first p-type semiconductor ring circle has wider ring width than that of the first deep trench and completely covers the upper rim portion of the first deep trench;
• the second deep trench in ring circle runs parallel to and is etched from top of the second p-type semiconductor ring circle down to the bottom of the second n-type semiconductor layer, wherein the second p-type semiconductor ring circle has wider ring width than that of the second deep trench and completely covers the upper rim portion of the second deep trench;
• and
• wherein all trenches of the rectifier device are enclosed trenches in ring circles with a same MOS-Sidewall-Plate structure, and the upper rim portion of each deep trench is completely covered by the p-type semiconductor layer.