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US 10,770,590 B2Granted
Semiconductor structures and fabrication methods thereof
AssigneesSemiconductor Manufacturing International (Shanghai) Corporation, SMIC New Technology Research and Development (Shanghai) Corporation
InventorFei Zhou
Life of this patent
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Abstract
A method for fabricating a semiconductor structure includes providing a base substrate, including a substrate, a plurality of gate structures formed on the substrate, and a cap layer formed on the plurality of gate structures; removing the cap layer to form a trench on each gate structure; and forming a substitution layer in the trench. The dielectric constant of the substitution layer is smaller than the dielectric constant of the cap layer.
Claims14
A method for fabricating a semiconductor structure, comprising:
- providing a base substrate, including a substrate, a plurality of gate structures formed on the substrate, and a cap layer formed on the plurality of gate structures, wherein each gate structure includes a gate dielectric layer formed on the substrate, a work function layer formed on the gate dielectric layer, and a gate electrode layer formed on the work function layer;
- forming a sidewall spacer is on each sidewall surface of the gate structure;
- removing the cap layer, a top portion of the gate dielectric layer, a top portion of the work function layer, a portion of a top portion of the sidewall spacer to form a trench on each gate structure, wherein a top surface of a remaining portion of the gate dielectric layer, a top surface of a remaining portion of the work function layer, and a top surface of a bottom portion of the sidewall spacer are coplanar with each other;
- and
- forming a substitution layer in the trench, wherein:
- a dielectric constant of the substitution layer is smaller than a dielectric constant of the cap layer.
3 more elements
Dependencies are inferred from the claim text.