Back to results
US 10,770,584 B2Granted
Drain extended transistor with trench gate
AssigneeTexas Instruments Incorporated
InventorChristopher Boguslaw Kocon
Life of this patent
Estimating the term…
Abstract
A semiconductor device includes a semiconductor substrate with a trench, a body region under the trench with majority carrier dopants of a first type, and a transistor, including a source region under the trench with majority carrier dopants of a second type, a drain region spaced from the trench with majority carrier dopants of the second type, a gate structure in the trench proximate a channel portion of a body region, and an oxide structure in the trench proximate a side of the gate structure.
Claims16
A semiconductor device, comprising:
- a semiconductor substrate with a trench that extends inward from a side of the semiconductor substrate;
- a body region under the trench in the semiconductor substrate, the body region including majority carrier dopants of a first type;
- and
- a drain extended transistor, including:
- a source region under the trench in the semiconductor substrate adjacent a channel portion of the body region, the source region including majority carrier dopants of a second type,
- a drain region spaced from the trench in the semiconductor substrate, the drain region including majority carrier dopants of the second type,
- a drift region between the channel portion of the body region and the drain region, the drift region including majority carrier dopants of the second type,
- a gate structure, including:
- a gate dielectric layer in the trench proximate the channel portion of the body region, and a gate electrode on the gate dielectric layer in the trench, and
- an oxide structure in the trench between a side of the gate structure and the drift region,
- wherein the drain region is spaced from the gate structure by a first distance;
- wherein the semiconductor substrate includes:
- a second trench that extends inward from the side of the semiconductor substrate, and
- a second body region under the second trench in the semiconductor substrate, the second body region including majority carrier dopants of the first type;
- wherein the semiconductor device further comprises a second drain extended transistor, including:
- a second source region under the second trench in the semiconductor substrate adjacent a second channel portion of the second body region, the second source region including majority carrier dopants of the second type,
- a second drain region spaced from the second trench in the semiconductor substrate, the second drain region including majority carrier dopants of the second type,
- a second drift region between the second channel portion of the second body region and the second drain region, the second drift region including majority carrier dopants of the second type,
- a second gate structure, including:
- a second gate dielectric layer in the second trench proximate the second channel portion of the second body region, and a second gate electrode on the second gate dielectric layer in the second trench, and
- a second oxide structure in the second trench between a side of the second gate structure and the second drift region;
- wherein the second drain region is spaced from the second gate structure by a second distance;
- and
- wherein the first distance is different than the second distance.
21 more elements
A semiconductor device, comprising:
- a semiconductor substrate with a trench that extends inward from a side of the semiconductor substrate, the trench having side surfaces and a bottom surface;
- a body region under the trench in the semiconductor substrate, the body region including majority carrier dopants of a first type;
- and
- a drain extended transistor, including:
- a source region under the bottom surface of the trench in the semiconductor substrate adjacent a channel portion of the body region, the source region including majority carrier dopants of a second type, the channel portion under the bottom surface of the trench,
- a drain region spaced from the trench in the semiconductor substrate, the drain region including majority carrier dopants of the second type,
- a drift region between the channel portion of the body region and the drain region, the drift region including majority carrier dopants of the second type,
- a gate structure, including:
- a gate dielectric layer in the trench proximate the channel portion of the body region, and a gate electrode on the gate dielectric layer in the trench, and
- an oxide structure in the trench between a side of the gate structure and the drift region.
7 more elements
A drain extended transistor, comprising:
- a source region under a trench of a semiconductor substrate, the source region laterally adjacent a channel portion of a body region, the body region including majority carrier dopants of a first type, the source region including majority carrier dopants of a second type;
- a drain region spaced from the trench in the semiconductor substrate, the drain region including majority carrier dopants of the second type;
- a drift region between the channel portion of the body region and the drain region, the drift region including majority carrier dopants of the second type;
- a gate structure, including:
- a gate dielectric layer in the trench proximate the channel portion of the body region, and a gate electrode on the gate dielectric layer in the trench;
- and
- an oxide structure in the trench between a side of the gate structure and the drift region.
4 more elements
A semiconductor device, comprising:
- a semiconductor substrate with a trench, the trench having side surfaces and a bottom surface;
- a body region under the trench in the semiconductor substrate;
- a drain extended transistor, including:
- a source region laterally adjacent a channel portion of the body region at a location under the bottom surface of the trench,
- a drain region spaced from the trench in the semiconductor substrate,
- a drift region between the channel portion of the body region and the drain region,
- a gate structure, including:
- a gate dielectric layer and a gate electrode in the trench over the channel portion of the body region, and
- an oxide structure in the trench between a side of the gate structure and the drift region;
- and
- a source contact structure extending through the trench and contacting the source region below the trench.
8 more elements
Dependencies are inferred from the claim text.