Semiconductor device

A semiconductor device comprising:

• a semiconductor substrate of a first conductivity type;
• a first semiconductor layer that is of the first conductivity type, provided on a front surface of the semiconductor substrate, and has an impurity concentration lower than an impurity concentration of the semiconductor substrate;
• a first semiconductor region that is of a second conductivity type and selectively provided in the first semiconductor layer;
• a second semiconductor region that is of the second conductivity type and selectively provided at a first surface of the first semiconductor layer, the first surface being opposite a second surface of the first semiconductor layer, the second surface facing toward the semiconductor substrate;
• a second semiconductor layer that is of the second conductivity type and provided on the first surface of the first semiconductor layer;
• third semiconductor regions that are of the first conductivity type, selectively provided in the second semiconductor layer of the second conductivity type, and have an impurity concentration higher than the impurity concentration of the semiconductor substrate;
• a first trench and a second trench that penetrate the third semiconductor regions of the first conductivity type and the second semiconductor layer of the second conductivity type, reach the first semiconductor layer, and have respective bottoms that are in contact with the first semiconductor regions, respectively;
• a gate electrode that is provided in the first trench, via a gate insulating film;
• a Schottky electrode that is provided in the second trench and that is connected to a source electrode;
• and
• a third semiconductor region that is of the second conductivity type, provided in a side portion of the second trench, and has an impurity concentration higher than the impurity concentration of the second semiconductor layer that is of the second conductivity type.