Power MOSFET device and manufacturing process thereof

A process for manufacturing a MOSFET device, comprising:

• forming, in a wafer of semiconductor material having a first main face and a second main face and a first conductivity type, a conductive via insulated from the wafer and extending completely from the first main face to the second main face;
• forming, within the wafer, a body region extending from the first main face of the wafer and having a second conductivity type;
• forming, within the body region, a source region extending from the first main face of the wafer and having the first conductivity type;
• forming, on the first main face of the wafer, a gate region;
• forming, on the first main face of the wafer, a source pad extending over, and in electrical contact with, the source region;
• forming, on the first main face of the wafer, a first gate pad extending over the first main face, alongside the source pad, and electrically coupled to the gate region;
• forming a drain pad extending on the second main face and electrically coupled to the wafer;
• and
• forming a second gate pad extending on the main face, alongside the drain pad, and electrically coupled to the conductive via, wherein forming a source pad and forming the first gate pad comprise depositing a first metal layer on the first main face and defining the first metal layer within an area with a rectangular shape having a first corner and a second corner adjacent to each other, and a first area and a second area adjacent to the first corner and to the second corner, respectively, the first gate pad being formed on the first area of the first main face;
• and wherein forming the drain pad and forming the second gate pad comprise depositing a second metal layer on the second main face, and defining the second metal layer so as to form the second gate pad in an area of the second main face vertically aligned to the second area of the first main face, the process further comprising forming a gate connection structure extending on one of the first and second main faces and electrically coupling one of the first gate pad and the second gate pad to the conductive via.

A MOSFET device comprising:

• a body of semiconductor material of a first conductivity type, having a first main surface and a second main surface;
• a source region, of the first conductivity type, extending within the body;
• a conductive gate region;
• a first gate pad extending on the first main surface and electrically coupled to the gate region;
• a second gate pad extending on the second main surface;
• and
• a conductive via extending through the body and electrically coupling the first gate pad to the second gate pad, wherein the first main surface has a generally rectangular shape having a first corner area and a second corner area spaced apart from each other, wherein the first gate pad extends over the first corner area of the first main surface and the second gate pad extends in an area of the second main surface vertically aligned to the second corner area of the first main surface.