Semiconductor device and method for manufacturing the same

A method for manufacturing a semiconductor device, the method comprising:

• providing a substrate;
• forming semiconductor layers at a side of the substrate to form an active region and an inactive region, the semiconductor layers comprising a first semiconductor layer located in the active region and a second semiconductor layer located in the inactive region;
• forming a source, a drain, and a gate in the active region, at a side of the semiconductor layer away from the substrate;
• forming an interconnecting metal at a side of the source away from the semiconductor layer and a side of the second semiconductor layer away from the substrate;
• and
• forming a via hole penetrated through the substrate, at least a part of the first semiconductor layer, and at least a part of the second semiconductor layer from a side of the substrate away from the semiconductor layers.