Lateral insulated-gate bipolar transistor and manufacturing method therefor
AssigneeCsmc Technologies Fab2 Co., Ltd.
InventorShukun Qi
Life of this patent
Estimating the term…
Abstract
A lateral insulated-gate bipolar transistor and a manufacturing method therefor. The lateral insulated-gate bipolar transistor comprises a substrate, an anode terminal and a cathode terminal on the substrate, and a drift region and a gate electrode located between the anode terminal and the cathode terminal. The anode terminal comprises an N-shaped buffer zone on the substrate, a P well in the N-shaped buffer zone, an N+ zone in the P well, a groove located above the N+ zone and partially encircled by the P well, polycrystalline silicon in the groove, P+ junctions at two sides of the groove, and N+ junctions at two sides of the P+ junctions.
Claims8
A lateral insulated-gate bipolar transistor, comprising:
- a P-type substrate;
- a cathode terminal located on the substrate;
- an anode terminal located on the substrate, the anode terminal comprising an N-type buffer region located on the substrate, a P well located in the N-type buffer region, an N+ region located in the P well, a trench located above the N+ region and partially surrounded by the P well, a polysilicon located in the trench, P+ junctions located at both sides of the trench, and N+ junctions located at both sides of the P+ junction;
- a drift region located between the anode terminal and the cathode terminal;
- and
- a gate located between the anode terminal and the cathode terminal;
- wherein the trench is a structure gradually increased in width from bottom to top to form a slope and having a narrow bottom and a wide top.
Dependencies are inferred from the claim text.